"GeSn Rule-23"-The Performance Limit of GeSn Infrared Photodiodes.

Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal-oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications. The performance of GeSn PDs is highly dependent on the Sn composition and operation temperature. Here, we develop theoretical models to establish a simple rule of thumb, namely "GeSn-rule 23", to describe GeSn PDs' dark current density in terms of operation temperature, cutoff wavelength, and Sn composition. In addition, analysis of GeSn PDs' performance shows that the responsivity, detectivity, and bandwidth are highly dependent on operation temperature. This rule provides a simple and convenient indicator for device developers to estimate the device performance at various conditions for practical applications.

Dark Current Analysis on GeSn p-i-n Photodetectors.

Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect densities present in GeSn alloys are the major challenge in developing practical devices, owing to the low-temperature growth and lattice mismatch with Si or Ge substrates. In this paper, we comprehensively analyze the impact of defects on the performance of GeSn p-i-n homojunction PDs. We first present our theoretical models to calculate various contributing components of the dark current, including minority carrier diffusion in p- and n-regions, carrier generation-recombination in the active intrinsic region, and the tunneling effect. We then analyze the effect of defect density in the GeSn active region on carrier mobilities, scattering times, and the dark current. A higher defect density increases the dark current, resulting in a reduction in the detectivity of GeSn p-i-n PDs. In addition, at low Sn concentrations, defect-related dark current density is dominant, while the generation dark current becomes dominant at a higher Sn content. These results point to the importance of minimizing defect densities in the GeSn material growth and device processing, particularly for higher Sn compositions necessary to expand the cutoff wavelength to mid- and long-wave infrared regime. Moreover, a comparative study indicates that further improvement of the material quality and optimization of device structure reduces the dark current and thereby increases the detectivity. This study provides more realistic expectations and guidelines for evaluating GeSn p-i-n PDs as a competitor to the III-V- and II-VI-based infrared PDs currently on the commercial market.

Plasmon enhancement of third-order nonlinear optical absorption of gold nanoparticles dispersed in planar oriented nematic liquid crystals.

We report structural and nonlinear optical properties of 20 nm gold (Au) nanoparticles (NPs) that are dispersed in planar degenerate (non-oriented) and planar oriented nematic liquid crystals (LCs) (4'-Pentyl-4-biphenylcarbonitrile-5CB). Taking advantage of elastic forces in the planar oriented nematic LC, we aligned AuNPs parallel to the 5CB director axis. In the case of planar degenerate, 5CB is not aligned and has no preferred orientation, forcing the AuNPs to disperse randomly. Results show that the linear optical absorption coefficient for the planar oriented 5CB/AuNPs mixture is larger than the corresponding planar degenerate sample. The nonlinear absorption coefficients are greatly enhanced in planar oriented samples at relatively high concentrations which can be attributed to plasmon coupling between the aligned AuNPs. This study demonstrates the utility of LCs for developing the assembly of NPs with enhanced optical properties which may offer important insight and technological advancement for novel applications, including photonic nanomaterials and optoelectronic devices.

Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics.

Silicon photonics is emerging as a competitive platform for electronic-photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theoretical study of GeSn vertical p-i-n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier collection path, thereby allowing for the simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2 µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2 µm wavelength band. The results indicate that the performance of the GeSn WGPD has a strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with a 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12 × 1010 cmHz½W-1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density.

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

Planar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics.

We report normal-incidence planar GeSn resonant-cavity-enhanced photodetectors (RCE-PDs) with a lateral p-i-n homojunction configuration on a silicon-on-insulator (SOI) platform for short-wave infrared (SWIR) integrated photonics. The buried oxide of the SOI platform and the deposited SiO2 layer serve as the bottom and top reflectors, respectively, creating a vertical cavity for enhancing the optical responsivity. The planar p-i-n diode structure is favorable for complementary-metal-oxide-semiconductor-compatible, large-scale integration. With the bandgap reduction enabled by the 4.2% Sn incorporation into the GeSn active layer, the photodetection range extends to 1960 nm. The promising results demonstrate that the developed planar GeSn RCE-PDs are potential candidates for SWIR integrated photonics.

GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength band.

The 2 µm wavelength band has recently gained increased attention for potential applications in next-generation optical communication. However, it is still challenging to achieve effective photodetection in the 2 µm wavelength band using group-IV-based semiconductors. Here we present an investigation of GeSn resonant-cavity-enhanced photodetectors (RCEPDs) on silicon-on-insulator substrates for efficient photodetection in the 2 µm wavelength band. Narrow-bandgap GeSn alloys are used as the active layer to extend the photodetection range to cover the 2 µm wavelength band, and the optical responsivity is significantly enhanced by the resonant cavity effect as compared to a reference GeSn photodetector. Temperature-dependent experiments demonstrate that the GeSn RCEPDs can have a wider photodetection range and higher responsivity in the 2 µm wavelength band at higher temperatures because of the bandgap shrinkage. These results suggest that our GeSn RCEPDs are promising for complementary metal-oxide-semiconductor-compatible, efficient, uncooled optical receivers in the 2 µm wavelength band for a wide range of applications.

Second Harmonic Light Manipulation with Vertical Split Ring Resonators.

The second harmonic generation (SHG) of vertical and planar split-ring resonators (SRRs) that are broken centro-symmetry configurations at the interface of metal surface and air is investigated. Strong interactions, better electromagnetic field confinements, and less leakage into the substrate for vertical SRRs are found. Experimental results show a 2.6-fold enhancement of SHG nonlinearity, which is in good agreement with simulations and calculations. Demonstrations of 3D metastructures and vertical SRRs with strong SHG nonlinearity majorly result from magnetic dipole and electric quadrupole clearly provides potential applications for photonics and sensing.

Low loss photonic nanocavity via dark magnetic dipole resonant mode near metal.

The dielectric-semiconductor-dielectric-metal 4 layered structure is a well-established configuration to support TM hybrid plasmonic modes, which have demonstrated significant advantages over pure photonic modes in structures without metal to achieve low loss resonant cavities at sub-diffraction limited volumes. The photonic modes with TE characteristics supported by the same 4 layered structure, on the other hand, are less studied. Here we show that a low loss photonic mode with TE01 characteristics exists in the dielectric-semiconductor-dielectric-metal 4 layered structure if a truncated cylindrical disk is chosen as the semiconductor core. This mode exhibits the lowest cavity loss among all resonant modes, including both pure photonic and hybrid plasmonic modes, at cavity radius <150 nm and within the wavelength range 620 nm to 685 nm, with a footprint ~0.83 (λ/2neff)2, physical size ~0.47 (λ/2neff)3 and a mode volume down to 0.3 (λ/2neff)3. The low cavity loss of this TE01 mode is attributed to its substantially reduced radiation loss to the far field by the creation of image charges through the metal response. Because of the low mode penetration in the metal, this photonic mode show equally low cavity loss near industry relevant metals such as Cu. Our study demonstrates an alternative to hybrid plamonic modes and metallo-dielectric modes to achieve low loss cavities with extremely small footprints.

Optically pumped lasing at 3 µm from compositionally graded GeSn with tin up to 22.3.

The recent demonstration of the GeSn laser opened a promising route towards the monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn content is highly desirable to enhance the emission efficiency and to cover longer wavelength. This Letter reports optically pumped edge-emitting GeSn lasers operating at 3 µm, whose device structure featured Sn compositionally graded with a maximum Sn content of 22.3%. By using a 1950-nm laser pumping in comparison with a 1064-nm pumping, the local heating and quantum defect were effectively reduced, which improved laser performance in terms of higher maximum lasing temperature and lower threshold.

Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement.

The GeSn-based quantum wells (QWs) have been investigated recently for the development of efficient GeSn emitters. Although our previous study indicated that the direct bandgap well with type-I band alignment was achieved, the demonstrated QW still has insufficient carrier confinement. In this work, we report the systematic study of light emission from the Ge0.91Sn0.09/Ge0.85Sn0.15/Ge0.91Sn0.09 double QW structure. Two double QW samples, with the thicknesses of Ge0.85Sn0.15 well of 6 and 19 nm, were investigated. Band structure calculations revealed that both samples feature type-I band alignment. Compared with our previous study, by increasing the Sn composition in GeSn barrier and well, the QW layer featured increased energy separation between the indirect and direct bandgaps towards a better direct gap semiconductor. Moreover, the thicker well sample exhibited improved carrier confinement compared to the thinner well sample due to lowered first quantized energy level in the Γ valley. To identify the optical transition characteristics, photoluminescence (PL) study using three pump lasers with different penetration depths and photon energies was performed. The PL spectra confirmed the direct bandgap well feature and the improved carrier confinement, as significantly enhanced QW emission from the thicker well sample was observed.

Advances in optical metasurfaces: fabrication and applications [Invited].

The research and development of optical metasurfaces has been primarily driven by the curiosity for novel optical phenomena that are unattainable from materials that exist in nature and by the desire for miniaturization of optical devices. Metasurfaces constructed of artificial patterns of subwavelength depth make it possible to achieve flat, ultrathin optical devices of high performance. A wide variety of fabrication techniques have been developed to explore their unconventional functionalities which in many ways have revolutionized the means with which we control and manipulate electromagnetic waves. The relevant research community could benefit from an overview on recent progress in the fabrication and applications of the metasurfaces. This review article is intended to serve that purpose by reviewing the state-of-the-art fabrication methods and surveying their cutting-edge applications.

Room temperature continuous wave quantum dot cascade laser emitting at 7.2 µm.

We demonstrate a quantum cascade laser with active regions consisting of InAs quantum dots deposited on GaAs buffer layers that are embedded in InGaAs wells confined by InAlAs barriers. Continuous wave room temperature lasing at the wavelength of 7.2 µm has been demonstrated with the threshold current density as low as 1.89 kA/cm2, while in pulsed operational mode lasing at temperatures as high as 110 °C had been observed. A phenomenological theory explaining the improved performance due to weak localization of states had been formulated.

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

Versatile Polarization Generation with an Aluminum Plasmonic Metasurface.

All forms of light manipulation rely on light-matter interaction, the primary mechanism of which is the modulation of its electromagnetic fields by the localized electromagnetic fields of atoms. One of the important factors that influence the strength of interaction is the polarization of the electromagnetic field. The generation and manipulation of light polarization have been traditionally accomplished with bulky optical components such as waveplates, polarizers, and polarization beam splitters that are optically thick. The miniaturization of these devices is highly desirable for the development of a new class of compact, flat, and broadband optical components that can be integrated together on a single photonics chip. Here we demonstrate, for the first time, a reflective metasurface polarization generator (MPG) capable of producing light beams of any polarizations all from a linearly polarized light source with a single optically thin chip. Six polarization light beams are achieved simultaneously including four linear polarizations along different directions and two circular polarizations, all conveniently separated into different reflection angles. With the Pancharatnam-Berry phase-modulation method, the MPG sample was fabricated with aluminum as the plasmonic metal instead of the conventional gold or silver, which allowed for its broadband operation covering the entire visible spectrum. The versatility and compactness of the MPG capable of transforming any incident wave into light beams of arbitrary polarizations over a broad spectral range are an important step forward in achieving a complete set of flat optics for integrated photonics with far-reaching applications.

Introduction to the Feature Issue on nanophotonics.

This feature issue is a partial collection of contributions from authors who presented their research at the 9th International Conference on Nanophotonics (ICNP 2016) held during March 21-25, 2016 at Academia Sinica, Taipei, Taiwan. ICNP is an independent conference series dedicated to nanophotonics research and applications. This feature issue collects 28 papers related to research presented at ICNP 2016.

Ge0.975Sn0.025 320 × 256 imager chip for 1.6-1.9 µm infrared vision.

We report the experimental fabrication and testing of a GeSn-based 320×256 image sensor focal plane array operating at -15°C in the 1.6-1.9 µm spectral range. For image readout, the 2D pixel array of Ge/GeSn/Ge p-i-n heterophotodiodes was flip-chip bonded to a customized silicon CMOS readout integrated circuit. The resulting camera chip was operated using back-side illumination. Successful imaging of a tungsten-filament light bulb was attained with observation of gray-scale "hot spot" infrared features not seen using a visible-light camera. The Ge wafer used in the present imaging array will be replaced in future tests by a germanium-on-silicon wafer offering thin-film Ge upon Si or on SiO2/Si. This is expected to increase the infrared responsivity obtained in back-side illumination, and it will allow an imager in a Si-based foundry to be manufactured. Our experiments are a significant step toward the realization of group IV near-mid-infrared imaging systems, such as those for night vision.

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

Normal-incidence Ge1-xSnx photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge1-xSnx/Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 109 cmHz1/2W-1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

Ultrafast Thermal Nonlinearity.

Third order nonlinear optical phenomena explored in the last half century have been predicted to find wide range of applications in many walks of life, such as all-optical switching, routing, and others, yet this promise has not been fulfilled primarily because the strength of nonlinear effects is too low when they are to occur on the picosecond scale required in today's signal processing applications. The strongest of the third-order nonlinearities, engendered by thermal effects, is considered to be too slow for the above applications. In this work we show that when optical fields are concentrated into the volumes on the scale of few tens of nanometers, the speed of the thermo-optical effects approaches picosecond scale. Such a sub-diffraction limit concentration of field can be accomplished with the use of plasmonic effects in metal nanoparticles impregnating the thermo-optic dielectric (e.g. amorphous Si) and leads to phase shifts sufficient for all optical switching on ultrafast scale.

Impact of surface collisions on enhancement and quenching of the luminescence near the metal nanoparticles.

The fact that surface-induced damping rate of surface plasmon polaritons (SPPs) in metal nanoparticles increases with the decrease of particle size is well known. We show that this rate also increases with the degree of the mode confinement, hence damping of the higher order nonradiative SPP modes in spherical particles is greatly enhanced relative to damping of the fundamental (dipole) SPP mode. Since higher order modes are the ones responsible for quenching of luminescence in the vicinity of metal surfaces, the degree of quenching increases resulting in a substantial decrease in the amount of attainable enhancement of the luminescence.